A Novel Material for Long-Wavelength Lasers: InNAsP
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چکیده
We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%–1%). The maximum temperature of operation for an InNAsP–GaInAsP microdisk laser is 70 C, which is about 120 C higher than that of a similar laser fabricated from GaInAs–GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.
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تاریخ انتشار 1998